Wi-Fi Chipset Market Growth Analysis, Size, Share, Analysis, COVID 19 Analysis,Posted by Minakshi on February 18th, 2021 Overview The Global Wi-Fi Chipset Market is expected to reach USD 27,183.7 Million by 2025 at a CAGR of 6.02% during the forecast period. Market Research Future (MRFR), in its report, envelops segmentations and drivers to provide a better glimpse of the market in the coming years. A growing number of public Wi-Fi hotspots and proliferation of smart devices such as personal computers and tablets are expected to create significant growth opportunities for the market in the coming years. However, standards and security associated with Wi-Fi technology are expected to limit the growth of the market during the forecast period. The extensive use of smart devices such as tablets and personal computers is expected to drive the Wi-Fi chipset market during the forecast period. Get Free Sample Report : https://www.marketresearchfuture.com/sample_request/2733 Competitive Analysis The Key Players of the Global Wi-Fi Chipset Market are Qualcomm Technologies Inc. (US), Mediatek Inc. (Taiwan), Intel Corporation (US), STMicroelectronics NV (Switzerland), Cypress Semiconductor Corporation (US), Taiwan Semiconductor Manufacturing Co Ltd (Taiwan), Global Foundries (US), Broadcom Inc (US), Marvell Technology Group Ltd (Bermuda), On Semiconductor (Quantenna Communications Inc) (US), Peraso Technologies, Inc. (Canada), Texas Instruments Inc. (US), Samsung Electronics Co Ltd. (South Korea), and United Microelectronics Corporation (Taian).
The Global Wi-Fi Chipset Market has been segmented based on Type, Fabrication Technology, Die Size, Application, and Region.
Based on fabrication technology, the market has been classified as FinFET, Fdsoi Cmos, Silicon on Insulator (SOI), and Sige. The FinFET segment accounted for the largest market share in 2018; it is expected to register the highest CAGR during the forecast period. Fin Field Effect Transistor (FinFET) is a multi-gate transistor structure used for manufacturing CPUs and memory modules that are smaller in size and provide faster performance and less energy consumption. FinFET devices are designed using a conducting channel that is built above the silicon on insulator (SoI) substrate, thus creating a fin-shaped silicon structure termed as a gate electrode. Fully Depleted Silicon on Insulator, or FDSOI, is a planar process technology that delivers the benefits of reduced silicon geometries while simplifying the manufacturing process. This fabrication process technology relies on two primary innovations. FDSOI CMOS remains a planar technology, which makes it easier to transition from conventional technologies. SOI is the fabrication of silicon semiconductor devices in a layered silicon insulator or silicon substrate. SOI technology allows continuous miniaturization of a MOSFET device. It is compatible with the fabrication process without any special equipment or retooling of an existing factory. SiGe or silicon-germanium is an alloy with any molar ratio of silicon and germanium, i.e., with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Based on die size, the market has been classified as 28nm, 20nm, 14nm, 10nm, and others. The 14nm segment accounted for the largest market share in 2018; it is expected to register the highest CAGR during the forecast period, and the 20nm segment was second highest in value. The 28nm is a half-node semiconductor manufacturing process which is used as a stopgap between the 32 nm and 22 nm processes. 28nm technology delivers higher performance, saves more energy, and it is more eco-friendly than other technologies. The 20nm technology has the capability of providing better density and power value than 22nm or 28 nm technology nodes as it uses energy-efficient transistors and interconnects, and the leading double patterning technique. 14nm FinFET process technology is considered ideal for power-efficient and high-performance system on chips (SoCs). The 10nm technology was first introduced between 2018–2019 and is characterized by its use in FinFET transistors with a 30–40s nm fin pitches. The other segment of die size includes technologies such as 16nm, 7nm, 5nm, and 3nm. Based on application, the market has been classified as smartphone, tablets pc, and others. The smartphone segment accounted for the largest market share in 2018, it is expected to register the highest CAGR during the forecast period, and the PC segment was second highest in value. A number of smartphones, including iOS and Android handsets, are equipped with Wi-Fi chips with the cellular modem (2G/3G/4G). There is a communication processor chip, which includes Wi-Fi, Bluetooth, and GPS, among others. The rising popularity of smartphones, tablets, and laptops resulting in demand for high data speed, ultimately increasing the demand for Wi-Fi chipsets. The desktop PCs do not come with inbuilt Wi-Fi; if the user wants to have wireless connectivity there are few options such as USB Wi-Fi adapters, a PCI-E Wi-Fi card, or a new motherboard with built-in Wi-Fi. About Market Research Future: At Market Research Future (MRFR), we enable our customers to unravel the complexity of various industries through our Cooked Research Report (CRR), Half-Cooked Research Reports (HCRR), Raw Research Reports (3R), Continuous-Feed Research (CFR), and Market Research & Consulting Services. Like it? Share it!More by this author |