Collecting the spectrum of a single LED chip driven

Posted by waterled on July 13th, 2021

After that, the two wafers were processed at the same time to produce a large-area, lateral blue light-emitting InGaN/GaN LED with a size of 1075\;m * 750\;m. The characteristics of the two sapphires are significantly different. Cavity sapphire contains a hemisphere with a height of 1.5 m and a diameter of 2.4 m, while the cone on the patterned sapphire is 1.7 m high and 2.7 m in diameter. The LED chips are cut from these wafers (see Figure 6), and the individual chips are mounted on the same package.

Figure 6. Horizontal LED, the size is 1075\;m * 750\;m, using cavity sapphire technology. Using a standard integrating sphere to measure the optical power, the power produced by the LED on the cavity sapphire is usually significantly higher than the power produced on the patterned sapphire (see Figure 7).

Collecting the spectrum of a single LED chip driven at 240 mA shows that those LED chips produced on cavity sapphire provide peak emission at 468 nm and produce optical power 40% higher than LEDs formed on patterned sapphire. The LEDs produced on cavity sapphire emit dominant wavelengths of 456nm and 462nm, which also outperform the LEDs formed on patterned sapphire, but the amplitude is smaller (see Figure 8). Figure 7.

Optical power microwave sensor ufo led high bay light of LEDs produced using cavity sapphire and patterned sapphire technology. Figure 8. The LED using cavity sapphire generates more power at the three main wavelengths of 456nm, 462nm, and 468nm than the LED formed on patterned sapphire. A big advantage of this cavity technology is that the surface of the substrate is made entirely of sapphire. This means that the chemical reactions associated with MOCVD growth are the same as those of flat and patterned sapphire. Although it may be necessary to slightly adjust the growth temperature to optimize device performance, the use of this technology does not require major changes to the production process.