Silicon Carbide Market (SiC) showing Footprints for Strong Annual Sales

Posted by Donald Rooney on September 13th, 2019

The Global Silicon Carbide (SiC) Market accounted for USD 257.7 million in 2016 growing at a CAGR of 18.5% during the forecast period of 2017 to 2024. The upcoming market report contains data for historic year 2014, 2015, the base year of calculation is 2016 and the forecast period is 2017 to 2024. Key players profiled in this report are: AGSCO Corporation, Entegr is Inc., ESD-SIC BV, ESK-SIC GmbH, Carborundum Universal Limited, Gaddis Inc., Grindwell Norton limited, Snam Abrasives, Saint-Gobain Ceramics Materials GmbH, Infineon Technologies AG, CREE Inc. (Wolfspeed), ROHM Semiconductor, STMicroelectronics N.V., ON Semiconductor, Toshiba Corporation, General Electric, Fuji Electric Co. Ltd, Renesas Electronics Corporation, GeneSiC Semiconductor Inc., Global Power Technologies Group, TanKeBlue Semiconductor Co. Ltd.

Major Market Drivers & Restraints:

  •         Reduced size of semiconductors and their increasing incorporation in wide range of applications
  •         Superior properties of SiC and technological developments
  •         Increasing substitution of existing pure silicon technology semiconductors
  •         SiC is an alternative to diamonds and can be used in drill tips or in abrasive.
  •         SiC based devices are expensive due to low manufacturing volume and low manufacturing yield

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Company Share Analysis: Global Silicon Carbide Market (SiC)

The report for silicon carbide (SiC) include detailed vendor level analysis for market shares in 2016 for Global, North America, Europe, Asia Pacific, Middle East and Africa and South America specifically. Also impact and development analysis of key vendors is registered in the market and factored on the basis of Vendor Positioning Grid Analysis which measures the vendors strengths and opportunities against present market challenges, measure providers ability to identify or satisfy present market needs, map providers market vision to current and upcoming market dynamics among others. The report also measures technology life line curve and market time line to analyze and do more affective investments.

Market Segmentation: Global Silicon Carbide Market (SiC)

  •          The SiC market is segmented on the basis of device into SiC discrete devices, and SiC bare die. The SiC discrete segment is further sub segmented into SiC MOSFET, SiC diode, and SIC module. On the basis of wafer size, the SiC market is segmented into 2 inch, 4 inch, and 6 inch. On the basis of application, the SiC market is segmented into RF device and cellular base station, power grid device, flexible AC transmission systems (FACTS), high-voltage direct current (HVDC), power supply and inverter, lighting control, industrial motor drive, flame detector, EV, motor drive, EV charging, electronic combat system, wind energy, and solar energy. On the basis of product, SiC market is segmented into black, green, refractory, coated, metallurgical, metallurgical briquettes and micro grit. On the basis of vertical, the SiC market is segmented into telecommunications, energy & power, automotive, renewable power generation, defense, chemicals, fabrication, information and communication technology (ICT), electronics & semiconductors, medical & healthcare, and industrial sector.
  •          On the basis of geography, silicon carbide market report covers data points for 28 countries across multiple geographies such as North America, South America, Europe, Asia-Pacific and Middle East & Africa.

Key insights in the report:

  •         Complete and distinct analysis of the market drivers and restraints
  •         Key Market players involved in this industry
  •         Detailed analysis of the Market Segmentation
  •         Competitive analysis of the key players involved

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Donald Rooney

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Donald Rooney
Joined: September 12th, 2019
Articles Posted: 87

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