Global 3D NAND Memory Market Size, Share, Growth, Analysis Forecast to 2025

Posted by Market Research Future on March 3rd, 2020

Global 3D NAND Memory Market to Demonstrate 30% CAGR from 2020 and 2025

The demand for lightweight and robust memory chips is on the rise on account of the increased application of electronics products they are embedded into. This trend has made a significant influence on the global 3D NAND memory market. Market Research Future projects that the global 3D NAND memory market will demonstrate a CAGR of 30% between 2020 and 2025. By the end of projection period, the market is expected to touch a valuation of USD 62 Bn.

3D NAND is a new-age technology, which is at a nascent stage. This in turn is boosting research and development efforts. Manufacturers are aggressively investing in new product development as they realise the application potential of 3D NAND. The technology is witnessing an uptake in several large-scale sectors. Adoption of NAND is also gaining traction owing to its non-volatile characteristics. Both NAND architectures planar and vertical are expected remain highly relevant during the forecast period.

NAND memory application has continued to grow across a slew of product, which include categories like high-capacity SSDs and small consumer devices. 3D NAND is increasingly used in high-capacity environments and hyperconverged infrastructure. Higher performance capacity is prompting end-use industries to lean towards 3D NAND. Moreover, cost-benefits and lower energy consumption are some of the impressive features of 3D NAND. Integration of 3D NAND in hyperconverged infrastructure allows user to cut down their network expenditure. 

The global 3D NAND memory market is benefiting from the growing demand for data storage in enterprises and consumer electronics. At the same time, the rising trend of device miniaturization is having a tremendous impact on the semiconductor industry. Nevertheless, the manufacturing costs of the 3D NAND puts make the product extremely expensive. Design and development of 3D NAND is challenging require a high level of expertise. Some Manufacturers are already shifting towards emerging alternatives such as solid-state storage (SSS), 3D XPoint (currently in use) phase-change memory (PCM) and resistive random access memory (RRAM).

Global 3D NAND Memory Market: Segmental Analysis

MRFR’s report includes a detailed analysis of the market vertical, application, type and region.

On the basis of vertical, the market has been segmented into IT & telecommunication, transportation, aerospace & defense, retail, healthcare and others. On the basis of application, the market has been segmented into flash card, smartphone, kiosk, USB, tablet, SSD and others. On the basis of type, the market has been segmented into multi-level cell (MLC), triple-level cell (TLC), and quad-level cell (QLC).

Global 3D NAND Memory Market: Regional Analysis

The market has been assessed across the Middle East & Africa (MEA), Europe, Asia Pacific (APAC), North America and Central & South America. APAC is expected to remain the frontrunner in the global 3D NAND memory market throughout the forecast period. Meanwhile, North America and Europe are expected to retain the second and third position respectively. Presence of a vast consumer electronics sector in the region remains favourable factor for the market in North America. Asia Pacific is viewed as an emerging market for 3D NAND memory. Exponential growth of the semiconductor industry in the countries such as China and Taiwan remain key market driver. China represents one of the largest semiconductor manufacturing industry in the world. At the same time, the region is home to some of fast-emerging semiconductor manufacturers.  

Access Report Details @ https://www.marketresearchfuture.com/reports/3d-nand-memory-market-1040

Global 3D NAND Memory Market: Competition Analysis

Leading companies discussed in MRFR’s report include Toshiba Corporation (Japan), Micron Technology, Inc. (US), SK HYNIX INC. (South Korea), Macronix International Co., Ltd (Taiwan), Delkin Devices (US), SAMSUNG (South Korea), Yangtze Memory Technologies Co., Ltd (YMTC) (China), Intel Corporation (US), Western Digital Corporation (US) and Applied Materials, Inc. (US).